When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?
Latest Answer: The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats ...
Why gold is added to the p-n junction?
Latest Answer: To reduce the recombination time. ...
Why are the 2 input terminals of an op-amp are called as inverting & non-inverting terminals?
Latest Answer: Because if we give input to one input means that will produce the same phase output where as the other(Inverting) pin produce 180 degree phase shifted output. ...
What is the equivalent of negative logic AND gate?
Latest Answer: NAND gate ...
What electronics are involved to build a device like a guitar tuner where you press a button to get a specific tone
What are the main advantages of synchronous circuit?
Latest Answer: Synchronous circuits have common clock and operate utilizing the same. Whereas a aynchronous circuits have different clock frequencies and operate without mutual co-ordination. ...
How does a Signal differ from a Wave
Latest Answer: TUF factor is high ...
Why are using 4ma to 20ma for signal transfer. Why not 0 to 20ma?
Latest Answer: You can detect when their is an open circuit. ...
Why do we use two ground pins in the pin diagram of 8086?
Latest Answer: There are basically two reasons for doing so, one is to remove GROUND BOUNCE one more reason is circuit complexity demands a large amount of current flowing through the circuits, and multiple grounds help in dissipating the accumulated heat so that device ...
Why BJT is known as current controlled device and FET is known as voltage controlled device?
Latest Answer: BJT as current controlled device - Base current controls the collector an emitter currentsFET as voltage controlled device-Field of p or n region decides width of conducting channel in n type or p type FET ...
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