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Germanium and Silicon Resistivity
When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?


  
Total Answers and Comments: 1 Last Update: May 01, 2009     Asked by: Renukrishnan 
  
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 Best Rated Answer
Submitted by: vmshankar20
 

The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats all!



Above answer was rated as good by the following members:
Renukrishnan, parth3737, priyam2230
April 30, 2009 15:44:57   
vmshankar20 Member Since: April 2009   Contribution: 2    

RE: Germanium and Silicon Resistivity

The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats all!


 
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